unisonic technologies co., ltd 10n60k power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-743.e 10 a , 600v n-channel power mosfet ? description the utc 10n60k is an n-channel power mosfet using utc?s advanced technology to provide customers a minimum on-state resistance and superior switch ing performance, etc. the utc 10n60k is generally applied in high efficient dc to dc converters, pwm motor controls and bridge circuits, etc. ? features * r ds(on) <1.2 ? @ v gs =10v * low gate charge (typical 90nc) * low c rss ( typical 18 pf) * high switching speed * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 10n60kl-tf3-t 10n60kg-tf3-t to-220f g d s tube 10n60kl-tf1-t 10N60KG-TF1-T to-220f1 g d s tube 10n60kl-tf2-t 10n60kg-tf2-t to-220f2 g d s tube 10n60kl-tf3t-t 10n60kg-tf3t-t to-220f3 g d s tube note: pin assignment: g: gate d: drain s: source ? marking information package marking to-220f to-220f1 to-220f2 to-220f3
10n60k power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-743.e ? absolute maximum ratings (t c = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 10 a drain current continuous i d 10 a pulsed (note 2) i dm 38 a avalanche energy single pulsed (note 3) e as 300 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220f/to-220f1 to-220f3 p d 50 w to-220f2 52 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l=6mh, i as =10a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 9.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case to-220f/to-220f1 to-220f3 jc 2.5 c/w to-220f2 2.4 c/w
10n60k power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-743.e ? electrical characteristics ( t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 1 a v ds = 480v, v gs = 0v, t c =125c 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient ? bv dss / ? t j i d =250a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 5a 0.5 0.8 1.2 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 1000 2040 pf output capacitance c oss 125 215 pf reverse transfer capacitance c rss 18 24 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =10a, r g =25 ? (note 1, 2) 50 70 ns turn-on rise time t r 69 150 ns turn-off delay time t d ( off ) 230 260 ns turn-off fall time t f 88 105 ns total gate charge q g v ds =480v, i d =10a, v gs =10 v (note 1, 2) 90 120 nc gate-source charge q gs 20 nc gate-drain charge q gd 22 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s =10a 1.4 v maximum continuous drain-source diode forward current i s 10 a maximum pulsed drain-source diode forward current i sm 38 a reverse recovery time t r r v gs = 0 v, i s = 10a, di f / dt = 100 a/s (note 1) 420 ns reverse recovery charge q rr 4.2 c note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
10n60k power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-743.e ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
10n60k power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-743.e ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
10n60k power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-743.e ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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